Studies of the Correlation Effect on the Anderson-Localized States in Si:P by the MCSCF Method.I.Uncompensated Case

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概要

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• We study the correlation effect on the electronic states in the uncompensated Si:Psystem from the intermediate to the critical concentration region, by the Multi-Configuration Self Consistent Field (MCSCF) method recently developed by the presentauthors. By simulating the Si:P system by a cluster model, we clarify the features ofthe Anderson-localized states and the nature of the metal-insulator transition from anew standpoint. It is shown that most of electrons form spin-singlet pairs and remain-ing pairs are spin-triplet. Near the metal-insulator transition, MCSCF one-electron or-bitals near the Fermi level are extended and the correlation becomes weak by screen-ing. This suggests the Mott-type transition.[Anderson localization, metal-insulator transition, Mott transition, Si:P, ll shallow impurity level, electron correlation, MCSCF method, spin pairl

• 社団法人日本物理学会の論文
• 1989-08-15

著者

• Eto Mikio

  Department Of Physics Faculty Of Science And Technology Keio University

• Kamimura Hiroshi

  Department Of Applied Physics . Faculty Of Science Tokyo University Of Science

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