Electronic Structure of Metal-Semiconductor Superlattice

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概要

• 論文の詳細を見る

• In this paper we consider a new type of metal-semiconductor superlattices and tryto clarify the features of its electronic structure. As a first example we choose Si-Alsuperlattice and calculate its electronic structure by the first principles LDF methodsself-consistently. The result predicts the two kinds of Fermi surface; one has twodimensional character and is associated with the interface states, while the other hasthree dimensional character and is associated with the bulk states. The calculatedcharge density shows the formation of covalent bonds between Si and Al atoms in theinterface region and this formation of covalent bonds results in the energy gain in thecohesive energy and is expected to compensate the energy loss due to the expansion oflattice constant in Al layers.

• 社団法人日本物理学会の論文
• 1986-05-15

著者

• 上村 洸

  Department Of Applied Physics Science University Of Tokyo

• KAMIMURA Hiroshi

  Department of Physics,Faculty of Science,University of Tokyo

• SHIRAISHI Kenji

  Department of Physics, University of Tsukuba

• Kamimura Hiroshi

  Department Of Applied Physics . Faculty Of Science Tokyo University Of Science

• Shiraishi Kenji

  Department Of Physics Faculty Of Science University Of Tokyo

• Shiraishi Kenji

  Department Of Physics Faculty Of Science And Technology Keio University

• Kamimura Hiroshi

  Department of Physics Faculty of Science,University of Tokyo

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