酸化すず薄膜のCVDにおける紫外光照射の効果

概要

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Transparent conducting films of SnO_2 were formed on Si and glass substrates from SnCl_4 and O_2 at low temperatures ranging from 100 to 400℃ by chemical vapor deposition (CVD). Effects of ultra-violet (UV) irradiation during CVD on the microstructure and the chemical composition of formed films and on deposition rates under various process parameters, such as deposition temperature and substrate material, were studied. The SnO_2 films formed at low temperatures below 300℃ and at higher temperatures had amorphous and tetragonal microstructures respectively, independent of UV irradiation. At high temperatures of 200℃ or above, the film formation was mainly conducted by thermal decomposition of SnCl_4,and almost no contribution of direct photodecomposition was observed. On the irradiated Si substrates, films could deposit even at low temperatures below 200℃, at which the thermal CVD rates were markedly low. This was interpreted in terms of the enhancement of an oxidation reaction by active oxygen atoms which were formed by a photocatalytic reaction of Si substrates.
公益社団法人精密工学会の論文
1992-12-05