スポンサーリンク
Ulsi Development Center Mitsubishi Electric Corporation | 論文
- Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity
- Imaging Characteristics of 0.12 μm Dynamic Random Access Memory Pattern by KrF Excimer Laser Lithography
- Impact of Spherical Aberrations on Printing Characteristics of Irregularly Aligned Patterns of Alternating Phase Shift Mask
- Measurement Method for Odd Component of Aberration Function Utilizing Alternating Phase Shift Mask
- Quantitative Measurement of the Ray Shift Aspect of Coma Aberration Utilizing Electrical Probe with Zero-Crossing Method
- Refractive Index Distribution in Photoresist Thin Film Formed by the Spin Coating Method
- Adhesion Improvement of Photoresist on TiN/Al Multilayer by Ozone Treatment
- 単層ハ-フト-ン型位相シフトマスクによるリソグラフィ-特性〔英文〕
- Effect of Phase Error on Lithographic Characteristics Using Attenuated Phase-Shifting Mask
- Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
- A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
- A Well-Synchronized Sensing/Equalizing Method for Sub-1.0-V Operating Advanced DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- A Smart Design Methodology with Distributed Extra Gate-Arrays for Advanced ULSI Memories (Special Issue on LSI Memories)
- Investigation of Pulsed Laser Removal of Cr and MoSi Film on a Quartz Substrate
- Large Scale Embedded DRAM Technology(Special Issue on Multimedia, Network, and DRAM LSIs)
- A Single Chip Multiprocessor Integrated with High Density DRAM
- A Long Data Retention SOI DRAM with the Body Refresh Function (Special Issue on New Concept Device and Novel Architecture LSIs)
- A Blanket Source Line Architecture with Triple Metal for Giga Scale Memory LSIs (Special Issue on ULSI Memory Technology)
- Circuit Technology for Giga-bit/Low Voltage Operating SOI-DRAM (Special Issue on SOI Devices and Their Process Technologies)
- Hot-Carrier Reliability of 0.1μm Delta-Doped MOSFETs