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Ulsi Development Center Mitsubishi Electric Corporation | 論文
- Simple Method for Resist Critical Dimension Prediction
- Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V 及び DLTS法による界面準位密度の測定
- Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V及びDLTS法による界面準位密度の測定
- MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
- MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
- Measurement of Spherical Aberration Utilizing an Alternating Phase Shift Mask
- A 0.4 μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories
- Characteristics of Charging Effect in One-Dimensional Array of Bi_2Sr_2CaCu_2O_ Intrinsic Josephson Junctions
- Growth of Y_1Ba_2Cu_3O_x Single-Crystal Whisker Using Sb-doped Precursor
- Lock-in Phenomena of Josephson Vortices under Vicinal Layer Parallel Magnetic Field
- Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
- Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
- Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
- Hot Carrier Evaluation of TFT by Emission Microscopy (Special Issue on Quarter Micron Si Device and Process Technologies)
- 111-MHz 1-Mbit CMOS Synchronous Burst SRAM Using a Clock Activation Control Method (Special Issue on ULSI Memory Technology)
- Highty Selective Contact Hole Etching Using Electron Cyclotron Resonance Plasma
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- A 5.8 ns 256 kb SRAM with 0.4μm Super-CMOS Process Technology (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- A 4-Mb SRAM Using a New Hierarchical Bit Line Organization Utilizing a T-Shaped Bit Line for a Small Sized Die (Special Issue on ULSI Memory Technology)