Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy
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概要
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The crystallinity and surface roughness of ZnTe epilayers grown on (0001) ZnO bulk substrates by metal organic vapor phase epitaxy are investigated. X-ray diffraction, Raman spectra, photoluminescence, and atomic force microscopy analysis results prove that the crystallinity and surface roughness of ZnTe epilayers depend on epitaxial growth temperature. A high-crystal-quality (111) ZnTe heteroepitaxial layer, with near-band-edge emission at 549 nm, was obtained at a substrate temperature of 460 °C.
- 2013-04-25
著者
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Tanaka Tooru
Department Of Biotechnology Faculty Of Engineering Kansai University
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Guo Qixin
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Akiyama Hajime
Department Of Dermatology Tenri Hospital
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Hirano Hiroyuki
Department Of Applied Chemistry Okayama University Of Science
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Saito Katsuhiko
Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
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Hirano Hiroyuki
Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
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Tanaka Tooru
Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
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Guo Qixin
Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
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