Optical Bandgap Energy of Wurtzite In-Rich AlInN Alloys
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概要
- 論文の詳細を見る
Ternary AlxIn1-xN films were grown on (0001) sapphire substrates by reactive radio-frequency magnetron sputtering with a wide composition range ($0\leqq x\leqq 0.40$) in the low Al composition regime. X-ray diffraction analysis showed that highly $c$-axis-oriented AlInN films with a wurtzite structure were obtained. The bandgap energy of the AlInN ternary was measured by optical absorption spectroscopy. Reasonable agreement for the bandgap energy was found between the experimental data and the theoretical results calculated using the ab initio pseudopotential method.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-15
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Tanaka Tooru
Department Of Biotechnology Faculty Of Engineering Kansai University
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Guo Qixin
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Nishio Mitsuhiro
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
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Tanaka Tooru
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
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