Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen
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概要
- 論文の詳細を見る
The reactive ion etching characteristics of ZnO have been investigated as functions of CH4/H2 gas composition, total gas pressure, and radio frequency (rf) plasma power. It was found that the etching rate of ZnO strongly depends on gas composition and gas pressure, suggesting that the etching of ZnO largely involves a process in which a volatile metalorganic zinc compound is formed. The etching rate of ZnO increased linearly with rf plasma power owing to its high bond-breaking efficiency, dc bias, and the degree of sputter desorption of etch products.
- 2006-11-15
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Tanaka Tooru
Department Of Biotechnology Faculty Of Engineering Kansai University
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Guo Qixin
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Nishio Mitsuhiro
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
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Guo Qixin
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
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Uesugi Nozomu
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
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Tanaka Tooru
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
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