Recovery from Dry Etching Damage in ZnTe by Thermal Annealing
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概要
- 論文の詳細を見る
Thermal annealing has been applied to the recovery from dry-etch-induced damage on ZnTe surfaces. We have demonstrated that the optical property of dry-etched ZnTe can be fully recovered by thermal annealing at temperatures above 300°C for 10 min, indicating that thermal annealing can eliminate the damage on ZnTe induced during reactive ion etching.
- 2005-06-10
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Tanaka Tooru
Department Of Biotechnology Faculty Of Engineering Kansai University
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Kume Yusukei
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Guo Qixin
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Nishio Mitsuhiro
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
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Guo Qixin
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
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