Fabrication of ZnTe Light-Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer
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概要
- 論文の詳細を見る
A ZnTe light-emitting diode (LED) was fabricated by Al thermal diffusion through an oxidation layer formed by O radical irradiation onto the surface of the ZnTe. The Al concentration in the diffused layer could be controlled by changing the O radical irradiation time, because this changes the thickness of the oxidation layer, resulting in a change in the Al concentration on ZnTe surface. The performance of the ZnTe LED strongly depends on the O radical irradiation time. Strong electroluminescence was observed in the ZnTe LEDs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-11-25
著者
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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GUO Qixin
Synchrotron Light Application Center, Saga University
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Nishio Mitsuhiro
Department of Electrical and Electronic Engineering, Saga University, 1 Honjo, Saga 840-8502, Japan
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Tanaka Tooru
Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan
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Ogawa Hiroshi
Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan
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