Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition

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概要

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• C-oriented ZnO epitaxial thin films were prepared on sapphire substrates by atmospheric-pressure metal organic chemical vapor deposition using diethyl zinc and water vapor as precursors. In-plane twins observed in ZnO films on sapphire (0001) substrates were reduced markedly by the use of ($11\bar{2}0$) substrates owing to a coincident-site lattice match and geometrical fitting. An extinction of peak splitting in the $\theta/2\theta$ scan and a reduction in full width at half maximum in rocking curves were also observed. In the case of the sapphire (0001) substrates, the rotational domains of the ZnO films were reduced by air-annealing of the substrates. It seems essential that the sapphire (0001) topmost surface be terminated by a single Al layer to eliminate the rotational domains.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-01-15

著者

• Kasuga Masanobu

  Interdisciplinary Graduate School Of Medicine And Engineering Department Of Electrical And Electroni

• Minegishi Kazunori

  Interdisciplinary Graduate School Of Medicine And Engineering Department Of Electrical And Electroni

• Tanaka Tooru

  Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan

• Ogawa Hiroshi

  Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan

• Kasuga Masanobu

  Interdisciplinary Graduate School of Medicine and Engineering, Department of Electrical and Electronic Engineering, University of Yamanashi, 4 Takeda, Kofu 400-8510, Japan

• Akiyama Shutetsu

  Interdisciplinary Graduate School of Medicine and Engineering, Department of Electrical and Electronic Engineering, University of Yamanashi, 4 Takeda, Kofu 400-8510, Japan

• Minegishi Kazunori

  Interdisciplinary Graduate School of Medicine and Engineering, Department of Electrical and Electronic Engineering, University of Yamanashi, 4 Takeda, Kofu 400-8510, Japan

• Tanaka Tooru

  Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan

関連論文

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• Fabrication of ZnTe Light-Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer
• ZnTe-Based Light-Emitting Diodes Fabricated by Solid-State Diffusion of Al through Al Oxide Layer
• Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition

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