Impact of Radio Frequency Powers on GaInN Film Growth by Magnetron Reactive Sputtering

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概要

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• GaInN films were grown on (0001) sapphire substrates by RF magnetron reactive sputtering. It was demonstrated that the Ga composition in the GaInN films can be controlled by varying the ratio of the applied RF power of the indium target to that of the GaAs target. X-ray diffraction analysis revealed that the lattice constant of GaInN decreases linearly with the increase in Ga composition, obeying Vegard's law. Optical investigation showed that the band gap energy of the GaInN films can be tailored in a wide range.

• 2012-11-25

著者

• Guo Qixin

  Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi

• Saito Katsuhiko

  Synchrotron Light Application Center Saga University

• Liu Feng

  Department Of Information And Communication Engineering Xian Jiaotong University

• Nishio Mitsuhiro

  Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan

• Tanaka Tooru

  Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan

• Shi Wangzhou

  Department of Physics, Shanghai Normal University, Shanghai 200234, China

• Nakao Tomoya

  Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan

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