Structural Properties of ZnTe Epilayers Grown on (0001) $\alpha$-Al2O3 Substrates by Metalorganic Vapor Phase Epitaxy

概要

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ZnTe layers have been grown on (0001) sapphire ($\alpha$-Al2O3) substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. The structural properties of the ZnTe layers are investigated by X-ray diffraction and reflection high-energy electron diffraction analyses. It is revealed that (111) ZnTe single-crystalline layers can be obtained on (0001) $\alpha$-Al2O3 substrates at a substrate temperature above 410 °C. The X-ray rocking curve measurements confirm that the crystalline quality of the ZnTe layers depends strongly on the substrate temperature, and the best crystalline quality ZnTe layer is obtained at a substrate temperature of 430 °C.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-11-15