Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates
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概要
- 論文の詳細を見る
We have succeeded in fabricating ZnTe light-emitting diodes (LEDs) using $p$-ZnTe substrate grown by the vertical Bridgman method. The substrate showed a full width at half maximum of the X-ray rocking curve of about 90 arcsec, and strong near-band-edge emission in the photoluminescence spectrum at low temperatures. $pn$-junction LED was fabricated by an Al diffusion technique. From the $I$-$V$ curve, the turn-on voltage was found to be approximately 2 V. Pure-green electroluminescence was observed clearly at a wavelength of 550 nm at room temperature.
- 2003-04-01
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Tanaka Tooru
Department Of Biotechnology Faculty Of Engineering Kansai University
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Guo Qixin
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Kume Yusuke
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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Guo Qixin
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, 1 Honjyo, Saga 840-8502, Japan
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Nishio Mitsuhiro
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, 1 Honjyo, Saga 840-8502, Japan
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Tanaka Tooru
Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, 1 Honjyo, Saga 840-8502, Japan
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