ZnTe-Based Light-Emitting Diodes Fabricated by Solid-State Diffusion of Al through Al Oxide Layer
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概要
- 論文の詳細を見る
The solid-state diffusion of Al in ZnTe through an Al oxide layer was examined for the fabrication of ZnTe-based light-emitting diodes (LEDs). By changing the thickness of the Al oxide layer deposited on a clean ZnTe surface, the Al concentration at the surface of ZnTe can be adjusted. The excellent uniformity of the diffusion depth of Al was obtained by using the Al oxide layer, in contrast to the previous oxide layer prepared by O radical irradiation. Current–voltage ($I$–$V$) characteristics and the output power of ZnTe LED can be controlled by the thickness of the Al oxide layer. The maximum output power obtained was as high as 18 μW under a forward current density of 8 A/cm2 in spite of a strong self-absorption effect. Therefore, the Al oxide layer can be used as a good diffusion-limiting layer for fabricating ZnTe LEDs by thermal diffusion.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-02-25
著者
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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GUO Qixin
Synchrotron Light Application Center, Saga University
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Guo Qixin
Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan
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Tanaka Tooru
Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan
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Ogawa Hiroshi
Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan
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Tanaka Tooru
Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan
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