Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer
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概要
- 論文の詳細を見る
The effects of a low-temperature ZnTe buffer layer on the crystallinity and surface roughness of ZnTe epilayers grown on (100) GaAs substrates by metalorganic vapor phase epitaxy are investigated. X-ray rocking curves, Raman spectra, and atomic force microscopy analysis results prove that both the crystallinity and surface roughness of ZnTe epilayers can be markedly improved by introducing a low-temperature ZnTe buffer layer, and that the thickness of the low-temperature ZnTe buffer layer is critical for obtaining a high-crystallinity ZnTe epilayer with a smooth surface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-08-25
著者
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Tanaka Tooru
Department Of Biotechnology Faculty Of Engineering Kansai University
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Nishio Mitsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Science And Engineering Saga Universi
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GUO Qixin
Synchrotron Light Application Center, Saga University
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Nishio Mitsuhiro
Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan
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Guo Qixin
Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
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Sueyasu Yusuke
Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan
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Cao Juncheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Tanaka Tooru
Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan
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Cao Juncheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
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