Surface Potential Investigation of Carbon Nanotube Field-Effect Transistor by Point-by-Point Atomic Force Microscope Potentiometry
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概要
- 論文の詳細を見る
We measured the local surface potential of a carbon nanotube field-effect transistor (CN-FET) by atomic force microscope potentiometry using the point-by-point contact method. When a bias voltage was applied to the nanotube, local variation in the surface potential reflecting the relative Fermi level was measured along the nanotube. Moreover, we observed that the potential barrier height at the source contact was changed upon application of positive gate voltages. This result suggests that the field-effect in the measured CN-FET was caused by modulation of the Schottky barrier at the source contact.
- 2010-02-25
著者
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KOBAYASHI Kei
Innovative Collaboration Center, Kyoto University
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MIYATO Yuji
Department of Electronic Science and Engineering, Kyoto University
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Matsushige Kazumi
Department Of Applied Science Faculty Of Engineering Kyushu University
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Hirofumi Yamada
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Yuji Miyato
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan
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