Solution Growth of Rubrene Single Crystals Using Various Organic Solvents
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概要
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To fabricate organic field-effect transistors (OFETs) with high carrier mobility, we attempted to grow 5,6,11,12-tetraphenylnaphthacene (rubrene) single crystals from solution and to improve their quality. Investigations into solvents in which rubrene was highly soluble proved that its solubility depended on the presence or absence of aromatic rings and chloro groups rather than on the polarity of the solvents. Rubrene crystals were grown from aromatic solvents, specifically from toluene, p-xylene, and aniline solvents, as well as from 1,2-dichloroethane (DCE) solvent. As a result, rubrene single crystals larger than 1 mm were obtained. Powder X-ray diffraction (XRD) analysis showed that the crystals obtained from the p-xylene and toluene solvents were rubrene, and 1H-nuclear magnetic resonance (1H-NMR) measurement proved that the crystals had not incorporated the solvent at the detection level. In addition, atomic force microscopy (AFM) confirmed that the rubrene crystals grown from the p-xylene and aniline solvents had flat faces and that the crystal from the p-xylene solvent had monomolecular steps on parts of the surfaces. Rubrene single crystal OFETs with graphite electrodes and parylene as an insulator showed carrier mobilities of ${\sim}0.75$ cm2 V-1 s-1.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-12-25
著者
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Mino Norihisa
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Abe Masayuki
Graduate School Of Engineering Osaka University
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Morita Seizo
Graduate School Of Engineering Osaka University
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Mori Yusuke
Graduate School Of Bionics Tokyo University Of Technology
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Takahashi Yoshinori
Graduate School And Faculty Of Science Himeji Institute Of Technology
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Kitaoka Yasuo
Graduate School Of Electrical Engineering Osaka University
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Mori Yusuke
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Matsukawa Takeshi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Takeya Junichi
Graduate School of Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-0043, Japan
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YOSHIMURA Masashi
Graduate school of Electrical Engineering, Osaka University
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SASAKI Takatomo
Graduate school of Electrical Engineering, Osaka University
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Sasaki Takatomo
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Tokiyama Tsukasa
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Sasai Kenichi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Murai Yusuke
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Hirota Nobuhiro
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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Tominari Yukihiro
Graduate School of Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-0043, Japan
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TAKEYA Junichi
Graduate School of Science, Osaka University
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Mino Norihisa
Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan
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