Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux

スポンサーリンク

概要

• 論文の詳細を見る

• AlN grains were synthesized using a Sn-Ca alloy flux. Conditions under which AlN grains could be synthesized were investigated by varying the flux composition (Ca:Sn) and the ratio of Al to flux. The Sn-Ca mixed flux enabled us to synthesize AlN grains under the relatively mild conditions of 900°C and 5 atm. We also attempted homoepitaxial liquid-phase epitaxy (LPE) growth on an AlN(0001) thin film grown on a sapphire(0001) substrate by metalorganic chemical vapor deposition (MOCVD) and obtained 1.8-μm-thick-AlN film in the liquid phase.

• Japan Society of Applied Physicsの論文
• 2005-04-10

著者

• Isobe Hiroaki

  Graduate School Of Electrical Engineering Osaka University

• KAWAMURA Fumio

  Graduate School of Pharmaceutical Sciences, Nagoya City University

• KAWAHARA Minoru

  Graduate School of Electrical Engineering, Osaka University

• Mori Yusuke

  Graduate School Of Bionics Tokyo University Of Technology

• Isobe Hiroaki

  Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• YOSHIMURA Masashi

  Graduate school of Electrical Engineering, Osaka University

• SASAKI Takatomo

  Graduate school of Electrical Engineering, Osaka University

• Kawahara Minoru

  Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

関連論文

• 2P-119 ヒトIgGに結合するRNAアプタマー複合体の立体構造(核酸・相互作用,複合体,第46回日本生物物理学会年会)
• New Technique of Manipulating a Protein Crystal Using Adhesive Material
• 2P007 大腸菌由来スペルミジンアセチルトランスフェラーゼのX線結晶構造解析(蛋白質-構造,第48回日本生物物理学会年会)
• Effects of 2-Methyl-1,4-naphtoquinone (Menadione) on Cellular Signaling in RBL-2H3 Cells(Analytical Biochemistry)
• Effects of Menadione, a Reactive Oxygen Generator, on Leukotriene Secretion from RBL-2H3 Cells
• Promotion of Crystal Nucleation of Protein by Semi-Solid Agarose Gel
• Superior Properties of Cesium Triborate CsB_3O_5 for 194 nm Light Generation with Nd:Y_3Al_5O_ Laser
• Refractive Index of CsB_3O_5 Grown by Top-Seeded Solution Growth
• 387-nm Generation in Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Utilization for 193-nm Light Source
• A Palm-Size Ultraviolet Laser Using a Combination of a Monolithic Wavelength Converter and an Optical Fiber
• Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
• Effect of Evaporation on Protein Crystals Grown in Semi-Solid Agarose Hydrogel
• Generation of Tunable Near-UV Laser Radiation by Type-I Second-Harmonic Generation in a New Crystal, K2Al2B2O7 (KABO)
• Bulk Crystal Growth of Stilbazolium Derivatives for Terahertz Waves Generation
• Synthesis of GaN Crystal Using Gallium Hydride
• Femtosecond Laser Processing of Agarose Gel Surrounding Protein Crystals for Development of an Automated Crystal Capturing System
• Protein Crystallization in Agarose Gel with High Strength: Developing an Automated System for Protein Crystallographic Processes
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Spatio-Temporal Control of Bacterial-Suspension Luminescence Using a PDMS Cell
• A Manipulating Tool for Protein Microcrystals in Solution Using Adhesive Materials
• Evaluation and Improvement of a Technique to Manipulate Protein Crystals in Solution
• Examination of Effects of H2 Concentration in Reactant Gas on GaN Growth by Gallium Hydride Vapor Phase Epitaxy
• Growth of Thick GaN Films with High Growth Rate Using Sublimation Method under High Pressure
• Phase-Matching Properties at around 190nm of Various Borate Crystals
• Polymorphs of Rubrene Crystal Grown from Solution
• Solution Growth of Rubrene Single Crystals Using Various Organic Solvents
• Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial Processes
• Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
• Structural Analysis of Carbon-Added Na--Ga Melts in Na Flux GaN Growth by First-Principles Calculation
• 387-nm Generation in GdxY1-xCa4O(BO3)3 Crystal and Its Utilization for 193-nm Light Source
• Structural Analysis of Carbon-Added Na-Ga Melts in Na Flux GaN Growth by First-Principles Calculation (Special Issue : Recent Advances in Nitride Semiconductors)
• Al Doping of CsLiB_6O_ for High Resistance to Ultraviolet-Induced Degradation

もっと見る 閉じる

スポンサーリンク