387-nm Generation in GdxY1-xCa4O(BO3)3 Crystal and Its Utilization for 193-nm Light Source
スポンサーリンク
概要
- 論文の詳細を見る
We report on near-UV generation in GdxY1-xCa4O(BO3)3 crystals used under type-I non-critical phase-matching conditions. GdxY1-xCa4O(BO3)3 was also applied to a 193-nm deep-UV laser source based on the eighth harmonic of an erbium-doped fiber amplifier output at 1547 nm, in which GdxY1-xCa4O(BO3)3 ($x = 0.68$) was used for 387-nm generation. Using this compact light source, 5% conversion efficiency from the 1547-nm input to the 193-nm output was achieved at a fundamental peak power of 18 kW.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-15
著者
-
Kitano Hiroshi
Core Technology Center Nikon Corporation
-
Owa Soichi
Core Technology Center Nikon Corporation
-
Kawai Hitoshi
Core Technology Center Nikon Corporation
-
Muramatsu Ken-ichi
Core Technology Center Nikon Corporation
-
Mori Yusuke
Graduate School Of Bionics Tokyo University Of Technology
-
YOSHIMURA Masashi
Graduate school of Electrical Engineering, Osaka University
-
SASAKI Takatomo
Graduate school of Electrical Engineering, Osaka University
-
Sasaki Takatomo
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Owa Soichi
Core Technology Center, Nikon Corporation, 1-6-3 Nishi-Ohi, Shinagawa-ku, Tokyo 140-8601, Japan
-
Kawai Hitoshi
Core Technology Center, Nikon Corporation, 1-6-3 Nishi-Ohi, Shinagawa-ku, Tokyo 140-8601, Japan
関連論文
- 2P-119 ヒトIgGに結合するRNAアプタマー複合体の立体構造(核酸・相互作用,複合体,第46回日本生物物理学会年会)
- New Technique of Manipulating a Protein Crystal Using Adhesive Material
- 2P007 大腸菌由来スペルミジンアセチルトランスフェラーゼのX線結晶構造解析(蛋白質-構造,第48回日本生物物理学会年会)
- Promotion of Crystal Nucleation of Protein by Semi-Solid Agarose Gel
- Superior Properties of Cesium Triborate CsB_3O_5 for 194 nm Light Generation with Nd:Y_3Al_5O_ Laser
- Refractive Index of CsB_3O_5 Grown by Top-Seeded Solution Growth
- 387-nm Generation in Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Utilization for 193-nm Light Source
- A Palm-Size Ultraviolet Laser Using a Combination of a Monolithic Wavelength Converter and an Optical Fiber
- Effect of Evaporation on Protein Crystals Grown in Semi-Solid Agarose Hydrogel
- Generation of Tunable Near-UV Laser Radiation by Type-I Second-Harmonic Generation in a New Crystal, K2Al2B2O7 (KABO)
- Measurements of the Nonlinear Refractive Index of an Er^-Doped Bi_2O_3-Based Glass Fiber : Optics and Quantum Electronics
- Bulk Crystal Growth of Stilbazolium Derivatives for Terahertz Waves Generation
- Synthesis of GaN Crystal Using Gallium Hydride
- Femtosecond Laser Processing of Agarose Gel Surrounding Protein Crystals for Development of an Automated Crystal Capturing System
- Protein Crystallization in Agarose Gel with High Strength: Developing an Automated System for Protein Crystallographic Processes
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Spatio-Temporal Control of Bacterial-Suspension Luminescence Using a PDMS Cell
- A Manipulating Tool for Protein Microcrystals in Solution Using Adhesive Materials
- Evaluation and Improvement of a Technique to Manipulate Protein Crystals in Solution
- Examination of Effects of H2 Concentration in Reactant Gas on GaN Growth by Gallium Hydride Vapor Phase Epitaxy
- Growth of Thick GaN Films with High Growth Rate Using Sublimation Method under High Pressure
- Protein Crystal Growth Using Laser-Processed Seed Crystals
- Phase-Matching Properties at around 190nm of Various Borate Crystals
- New Approach to Improve X-Ray Diffraction Pattern of Protein Crystal Using UV-Laser Ablative Processing
- Protein Crystal Processing Using a Deep-UV Laser
- Polymorphs of Rubrene Crystal Grown from Solution
- Solution Growth of Rubrene Single Crystals Using Various Organic Solvents
- Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial Processes
- Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
- Structural Analysis of Carbon-Added Na--Ga Melts in Na Flux GaN Growth by First-Principles Calculation
- 387-nm Generation in GdxY1-xCa4O(BO3)3 Crystal and Its Utilization for 193-nm Light Source
- Structural Analysis of Carbon-Added Na-Ga Melts in Na Flux GaN Growth by First-Principles Calculation (Special Issue : Recent Advances in Nitride Semiconductors)
- Al Doping of CsLiB_6O_ for High Resistance to Ultraviolet-Induced Degradation