Growth of Thick GaN Films with High Growth Rate Using Sublimation Method under High Pressure
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概要
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We found that the growth rate of GaN is much higher using the sublimation method under high pressure than under normal pressure. It seems that the high thermal decomposition temperature under high pressure suppresses the decomposition of the growing GaN film. A growth rate of 130 μm/h was achieved by optimizing the growth temperature and the ambient pressure. This growth rate is as high as that achieved through hydride vapor phase epitaxy (HVPE). The GaN crystals were characterized using scanning electron microscopy (SEM) and X-ray diffraction (XRD).
- 2004-04-01
著者
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KAWAMURA Fumio
Graduate School of Pharmaceutical Sciences, Nagoya City University
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Sasaki Takatomo
Graduate School Of Engineering Osaka University
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Kobayashi Satoru
Graduate School Of Hum.and Sci. Nihon Univ.
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Yoshimura Masashi
Graduate School Of Engineering Osaka University
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Mori Yusuke
Graduate School Of Bionics Tokyo University Of Technology
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Imade Mamoru
Graduate School Of Electrical Engineering Osaka University
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Mori Yusuke
Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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YOSHIMURA Masashi
Graduate school of Electrical Engineering, Osaka University
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Yoshimura Masashi
Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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SASAKI Takatomo
Graduate school of Electrical Engineering, Osaka University
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Sasaki Takatomo
Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kobayashi Satoru
Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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