Examination of Effects of H2 Concentration in Reactant Gas on GaN Growth by Gallium Hydride Vapor Phase Epitaxy

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概要

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• The dependence of H2 concentration in a reactant gas on the rate of GaN single crystal growth by gallium hydride vapor phase epitaxy (GaH-VPE) method was investigated. In the GaH-VPE, gallium hydride (GaHx), which was synthesized by introducing H2 gas into Ga melt, reacts with NH3 to form GaN single crystals. Growth rate increased with a H2 concentration less than 20 mol % and reached a maximum at H2 concentration of 20 mol %. However, too much H2 gas decreased the growth rate. The observation of the surface morphology of grown films by scanning electron microscopy (SEM) clarified that H2 gas, which did not contribute to the reaction with Ga for GaHx formation, promoted the decomposition of GaN at a high H2 concentration. This study gave us the knowledge that the growth rate of GaN crystals greatly depends on the reaction efficiency between Ga and H2. In addition, GaN film with a smooth surface was grown at a high NH3/GaHx ratio.

• 2006-09-25

著者

• KAWAMURA Fumio

  Graduate School of Pharmaceutical Sciences, Nagoya City University

• Sasaki Takatomo

  Graduate School Of Engineering Osaka University

• KAWAHARA Minoru

  Graduate School of Electrical Engineering, Osaka University

• Yoshimura Masashi

  Graduate School Of Engineering Osaka University

• Mori Yusuke

  Graduate School Of Bionics Tokyo University Of Technology

• Imade Mamoru

  Graduate School Of Electrical Engineering Osaka University

• Mori Yusuke

  Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• YOSHIMURA Masashi

  Graduate school of Electrical Engineering, Osaka University

• SASAKI Takatomo

  Graduate school of Electrical Engineering, Osaka University

• Sasaki Takatomo

  Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Imade Mamoru

  Graduate School of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

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