High-Spatial-Resolution Topographic Imaging and Dimer Distance Analysis of Si(100)-(2$\times$1) Using Noncontact Atomic Force Microscopy
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概要
- 論文の詳細を見る
The distance between bright spot in a dimer on the Si(100)-(2$\times$1) surface imaged by noncontact atomic force microscopy (NC-AFM) is analyzed. We used in the analysis only high-spatial-resolution topographic NC-AFM images obtained using different tips at room temperature. Atoms in the dimer was clearly resolved, which enabled us to analyze the distance between two bright spots in the dimer statistically. The average distance was similar to that obtained in a previous study and the theoretical predition. The results indicated that dimer flipping was induced by the AFM tip during scanning and upper–upper atoms are imaged at room temperature.
- 2008-07-25
著者
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Sugimoto Yoshiaki
Graduate School Of Engineering Osaka University
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Abe Masayuki
Graduate School Of Engineering Osaka University
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Morita Seizo
Graduate School Of Engineering Osaka University
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Sawada Daisuke
Graduate School Of Engineering Osaka University
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Abe Masayuki
Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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Namikawa Takashi
Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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Hiragaki Masuhiro
Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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Sugimoto Yoshiaki
Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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Sawada Daisuke
Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
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