20305 CMPプロセスにおける材料除去モデルの研究 : 第四報 : スラリー中の微粒子の機能に関する研究(OS3 機械工学が支援する微細加工技術(半導体・MEMS・NEMS)(2),オーガナイズドセッション)

概要

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This paper studies fine particles in slurry on chemical mechanical polishing (CMP) process for SiO_2 layer. The material removal phenomena in CMP process is not revealed perfectly yet. Therefore, the function of fine particles in slurry acting on the wafer surface have not explained. It is said that material removal phenomena in oxide wafer CMP process was considered conventionally that fine particles in slurry are thrusted into wafer surface with polishing pad, and then scratch and remove wafer material as small fragments. However, this assumption has a lot of contradictions. In addition it is not clear that the function of fine particles in slurry acting on the wafer surface. In this study, we focused on basic function of particles in slurry. First, we attempted to observe material removal phenomena with AFM in the way that AFM stylus tip was presumed as SiO_2 particle. Next, fine particles in slurry before and after CMP were obserbed by super- dynamic light scattering spectrophotometer and transmission electron microscope (TEM).
一般社団法人日本機械学会の論文
2010-03-09