大気圧低温HeプラズマによるZnO薄膜の作製における原料加熱の効果

概要

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Under atmospheric pressure, homogenous non-equilibrium cold plasma was generated by rf(27.12MHz) excitation of He(1700ml/min) and O_2(0-15ml/min) gases. Bis-dipivaloylmethanato zinc (Zn(O_2C_<11>H_<19>)_2) was vaporized and carried with the He gas flow into the plasma zone to be deposited as a thin film on a glass substrate at room temperature. To assist the decomposition and oxidation of Zn(O_2C_<11>H_<19>)_2 for creation of the ZnO film, a heat treatment tube was placed between the vaporizer and the plasma torch and oxygen gas was added to the system either before or after the heat treatment. XRD, AFM, and AES analyses verified fabrication of a polycrystalline ZnO film.
2005-03-15