半導体ひずみセンサを用いたひずみ検知マテリアル(J09-1 モニタリング,J09 知的材料・構造システム)

概要

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A low-power micro semiconductor strain sensor that utilizes piezoresistance effect was developed for measuring the strain distribution of a mechanical material. The strain sensitive device in the sensor is a p-type diffused resistor formed on a Si (100) substrate. In order to decrease the effect of temperature fluctuation on the output of the sensor, a Wheatstone bridge circuit, which consists of active resistors along the <110> direction and dummy resistors along the <100> directions, is built. A four-bending test for a stainless steel plate to which the sensor is attached was carried out. The experimental result showed that the bridge circuit works correctly and the sensitivity is enough to measure the strain generated on a material.
社団法人日本機械学会の論文
2004-09-04