301 Si<100> チャネル MOS トランジスタのドレイン電流特性に及ぼす応力の影響

概要

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We investigated the effects of internal stress on electrical properties of transistors fabricated on single-crystalline-silicon substrates. The electrical current direction (channel direction) was set in the Si<100>direction instead of the conventional Si<110>directions. The stress was stepwise applied to single-crystalline silicon by using a four-point-bending method, and the drain-electrical-current change caused by the stress was measured. The measurement showed that the drain electrical current changed linearly with the tensile stress parallel or perpendicular to the channel direction. The drain current in negative channel transistors increased with the tensile-stress increase. On the other hand, the drain current in positive channel transistors decreased with the tensile-stress increase. The defference between<100>-channel transistors and<110>-channel ones is discussed.
社団法人日本機械学会の論文
2003-09-19