Change in the characteristics of amorphous As_2S_3 induced by injected acoustic domains : Physical Acoustics
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-07-01
著者
-
HATA Tomonobu
Faculty of Technology, Kanazawa University
-
Okano Shuichi
Faculty of Technology, Kanazawa University
-
SUZUKI Masakuni
Faculty of Technology, Kanazawa University
-
Okano Shuichi
Faculty Of Engineering Kanazawa University
-
Hata Tomonobu
Faculty Of Engineering Kanazawa University
-
Suzuki Masakuni
Faculty Of Engineering Kanazawa University
-
TOKUNAGA Yoshiaki
Kanazawa Institute of Technology
-
MORIMOTO Shozo
Faculty of Technology, Kanazawa University
-
Morimoto Shozo
Faculty Of Technology Kanazawa University
-
Tokunaga Yoshiaki
Kanazawa Technical College
-
Tokunaga Yoshiaki
Kanazawa Inst. Technol. Ishikawa Jpn
関連論文
- Optical and Thermal Evaluation of Semiconductor by Differential Photothermal Deflection Spectroscopy : Photoacoustic Spectroscopy and Ultrasonic Imaging
- Determination of Material Thermal Properties Using Photoacoustic Signals Detected by a Transparent Transducer
- Analysis of Pyroelectric Signal in Photoacoustic Spectroscopy Using a Transparent Transducer
- Influence of Piezoelectric and Pyroelectric Effects on Signal of PAS Using a Transparent Transducer : Photoacoustic Spectroscopy and Ultrasonic Imaging
- Theoretical Analysis of Photoacoustic Signal on PAS Using a Transparent Transducer : Photoacoustic Effect and Spectroscopy
- Consideration on PA Signals of Multilayer Structure Measured by PAS Using Transparent Transducer : Photoacoustic Spectroscopy
- Reduction of Internal Stress by Compositional Gradient Layer Inserted between TiSi_2 and Si
- Impurity Effects in Chalcogenide Amorphous Semiconductors by Low-Temperature Diffusion of Metal Ions
- Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors
- Evaluation of Multilayer Structure and Depth Profile by PAS Using a Transparent Transducer : Photoacoustic Spectroscopy
- Evaluation of Ion Implantation into Silicon Photoacoustic Spectroscopy using Transparent Transducer Method : Photoacoustic Spectroscopy
- Nonvolatile Memory Based on Phase Change in Se-Sb-Te Glass
- High Rate Deposition of Thick Piezoelectric ZnO and AlN Films Using a New Magnetron Sputtering Technique : Communication Devices and Materials
- Study on Estimation of Metal Film Thickness by Attenuated Total Reflection
- Reply to "Comments" by M. Kikuchi et al.
- Endotherm in Switch-on Process in Semiconducting Glasses
- Formation of Semiconductive Thin Film of Polyacrylonitrite by Vacuum Deposition
- Conductivity Control and Photovoltaic Effects in Chalcogenide Amorphous Semiconductor : II-4: NEW STRUCTURE AND ADVANCED MATERIAL (2)
- Change in the characteristics of amorphous As_2S_3 induced by injected acoustic domains : Physical Acoustics
- Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering
- High Rate Deposition of ZnO Film Using Improved DC Reactive Magnetron Sputtering technique : C-2: SURFACE WAVE AND MAGNETIC DEVICES
- Electrical Properties of Ge_As_x Glasses
- Evaluation of Optical Absorption Coefficient of Si by Photothermal Spectroseopy Using Transparent Pyroelectric Transducer
- Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process(Recent Progress in Oxide Thin Films by Sputtering)
- High Rate and Low Temperature Deposition of Co-Cr Films by Exposed Pole Magnetron Co-Sputtering System
- Estimation of Thickness of Metal Film Glass by Scanning Acoustic Microscope : Ultrasonic Imaging and Microscopy
- Doping Effects of Group-III and -V Element on a-Si Prepared by High Pressure rf Sputtering : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- ESR in As_2S_3 Glasses
- Variation of the ESR Spectrum of Mn^ in Te_As_Ge_Si_x Glasses with x and Annealing
- Amorphous Silicon Films Prepared by rf-Bias Sputtering : III-1: AMORPHOUS FILMS
- Thermal Stability of Pure a-Si Films Prepared by rf-Bias Sputtering
- Study on Photopyroelectric Signal of Optically Opaque Material Measured by Polyvinylidene Difluoride Film Sensor
- Effects of rf-Bias on Properties of Sputtered Silicon Films
- Optical-Transmission Modulation in CdS Caused by Off-Axis Acoustoelectric Domain
- Lattice Attenuations in CdS Measured by Acoustic Domains
- Frequency Spectrum of CdS Acoustic Domains for Acoustic Domain Injection Technique : Ultrasonic Transduction
- Frequency Spectrum of Acoustic Domain Caused by Variable Rise-Time Pulse : Physical Acoustics II
- New Control Method of CdS High Field Demain Velocity Induced by Injected Acoustic Flux
- P2-7 Evolutional Research on the Second Harmonic in 50MHz Band Nonlinear Surface Acoustic Wave(Short oral presentation for posters)
- Fabrication and Characterization of ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu Structures for Ferroelectric-Electroluminescent Devices
- Mechanisms of Transmitted Optical Modulation Caused by Acoustic Flux in CdS
- Threshold Electric Field for Domain Formation in Semiconductive CdS
- Measurement of Nonlinear Acoustic Gain in CdS
- Study on Differential Photothermal Deflection Spectroscopy (PDS) Considering the Intensity Profile of a Probe Beam
- Influence of Mn Impurity in Te-As-Ge-Si Glasses
- ESR Studies of Mn^ in Multicomponent Amorphous Semiconductors
- Nonvolatile Memory Based on Phase Change in Se–Sb–Te Glass
- Electrical Properties of Evaporated Polyacrylonitrile Films
- Composition Dependences of Electrical and Optical Properties of As_xTe_Ge_ and As_Te_Ge_Si_x Glasses