Effects of rf-Bias on Properties of Sputtered Silicon Films
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概要
- 論文の詳細を見る
Amorphous silicon films were prepared by rf-bias sputtering with a magnetron target and the effects of substrate bias on the electrical and optical properties of sputtered films were studied. Moderate substrate bias was found to improve film quality: photoconductivity increased to ∼2×10^<-4> 〓/cm and the spin density decreased to ∼4×10^<17> cm^<-3> for the biased samples. The results are interpreted in terms of the removal of loosely bound materials from the surface by ion-bombardment. Low voltage sputtering due to the magnetron target in high argon pressure would also play some roles in the improvement of film quality.
- 社団法人応用物理学会の論文
- 1981-07-05
著者
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Okano Shuichi
Faculty Of Engineering Kanazawa University
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Suzuki Masakuni
Faculty Of Engineering Kanazawa University
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MAEKAWA Toshikazu
Faculty of Technology
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Maekawa Toshikazu
Faculty Of Technology Kanazawa University
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BANDOW Tsutomu
Ishikawa Technical College
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