Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-07-05

著者

• Naoe Masahiko

  Faculty of Engineering, Tokyo Institute of Technology

• Naoe Masahiko

  Faculty Of Engineering Tokyo Institute Of Technology

• Naoe Masahiko

  Faculty Of Engineering Tokyo Institute Of Technology Oh-okayama

• Okano Shuichi

  Faculty of Technology, Kanazawa University

• SUZUKI Masakuni

  Faculty of Technology, Kanazawa University

• Okano Shuichi

  Faculty Of Engineering Kanazawa University

• Suzuki Masakuni

  Faculty Of Engineering Kanazawa University

• ISHII Kiyoshi

  Faculty of Engineering, Tokyo Institute of Technology, Oh-okayama

• Yamanaka Shun'ichi

  Faculty Of Engineering Tokyo Institute Of Technology Oh-okayama

• Ishii Kiyoshi

  Faculty Of Engineering Tokyo Institute Of Technology Oh-okayama

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• Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering
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