Deposition of Amorphous CoZrNb Films Using CMF Magnetron Sputtering Technique

概要

論文の詳細を見る
Amorphous CoZrNb films with high saturation magnetization $4\pi$Ms of about 14 kG and low coercivity Hc of about 0.3 Oe have been successfully prepared by the CMF magnetron sputtering technique with a CoZrNb alloy target. Hc and $4\pi$Ms along the easy axis were changed by background pressure, film thickness and Ar pressure $P_{\text{r}}$. The applied voltage of discharge operation is as low as 270 V at $P_{\text{r}}$ of 0.3 Pa. The maximum deposition rate is as large as 0.13 $\mu$m/min for a power density of 4.42 W/cm2. The target utilization efficiencies are improved in spite of using a magnetic target because a leakage magnetic field increases more to a greater extent by attaching an outer pole piece. These are about 95% and 60% in surface area and in volume, respectively. The changes in a film thickness of 1 $\mu$m deposited on the substrate were 0.05 $\mu$m at $P_{\text{r}}$ of 0.2 Pa, and 0.06 $\mu$m at a distance of 50 mm between substrate and target, respectively.
1989-03-20