Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O_2
スポンサーリンク
概要
- 論文の詳細を見る
Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6. 5Fe_2O_3 at substrate temperature of 600℃ using the facing targets sputtering apparatus. The gas mixture of Ar and Xe of 0.18 Pa and O_2 of 0.02 Pa was used as the sputtering gas and the dependences of crystallographic and magnetic characteristics on the partial Xe pressure P_ltxegt(0.0-0.18 Pa) were investigated. Films deposited at various P_ltxegt were composed of BaM ferrite and spinel crystallites, and the minimum centerline average roughness R_a of 8.3 nm was obtained at P_ltxegt of 0.10 Pa. Since saturation 4πM_s of 5.1 kG and perpendicular anisotropy constant K_ltu1gt of 4.23 × 10^5 J・m^lt-3gt were larger than those of bulk BaM ferrite of 4.8 kG and 3.30× 10^5 J・m^lt-3gt, respectively, these films appeared promising for use as perpendicular recording media.
- 社団法人電子情報通信学会の論文
- 1995-11-25
著者
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Noma Kenji
Faculty Of Engineering Tokyo Institute Of Technology
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Matsushita Nobuhiro
Faculty of Engineering, Tokyo Institute of Technology
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Nakagawa Shigeki
Faculty of Engineering, Tokyo Institute of Technology
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Naoe Masahiko
Faculty of Engineering, Tokyo Institute of Technology
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Naoe Masahiko
Department Of Physical Electronics Tokyo Institute Of Technology
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Naoe Masahiko
Faculty Of Engineering Tokyo Institute Of Technology
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Matsushita N
Dept. Of Physical Electronics Tokyo Institute Of Technology
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Naoe M
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa S
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Shigeki
Faculty Of Engineering Tokyo Institute Of Technology
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