Deposition of Silicon Nitride Films by High Rate Reactive Sputtering : A-1: ADVANCED LITHOGRAPHY AND PROCESS

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Naoe Masahiko

  Faculty of Engineering, Tokyo Institute of Technology

• Naoe Masahiko

  Faculty Of Engineering Tokyo Institute Of Technology

• Hoshi Youichi

  Faculty Of Engineering Tokyo Institute Of Technology

• YAMANAKA Shun-ichi

  Faculty of Engineering, Tokyo Institute of Technology

• Yamanaka Shun-ichi

  Faculty Of Engineering Tokyo Institute Of Technology

関連論文

• Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O_2
• Variable Surface Acoustic Wave Delay Line Consisting of a Magnetic Thin Film on a LiNbO_3 Substrate : C-2: SURFACE WAVE AND MAGNETIC DEVICES
• Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering
• Sputtered Dielectric Thin Films with High-Refractive-Index for Optical Waveguide
• Deposition of Tantalum Thin Films by Ion Beam Sputtering
• Deposition of Silicon Nitride Films by High Rate Reactive Sputtering : A-1: ADVANCED LITHOGRAPHY AND PROCESS
• High Rate Deposition of Iron Films by Sputtering from Two Facing Tragets
• Control of Soft Magnetism of Co-Zr and Co-Zr-Ta Films for Backlayers in Perpendicular Magnetic Recording Media
• Deposition of Amorphous CoZrNb Films Using CMF Magnetron Sputtering Technique

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