Evaluation of Optical Absorption Coefficient of Si by Photothermal Spectroseopy Using Transparent Pyroelectric Transducer
スポンサーリンク
概要
- 論文の詳細を見る
This paper concerns the evaluation of the optical absorption coefficient of Si by photothermal spectroscopy (PTS) using a transparent pyroelectric transducer (LiNbO_3). In the theoretical analysis the optical absorption of the transducer, the multiple reflection of the incident beam and the air gap are taken into account. The calculation method of the optical absorption coefficient is presented using the relationship between the experimental PT amplitude signal and the theoretical absorption coefficient. The validity of the analysis is confirmed experimentally.
- 社団法人応用物理学会の論文
- 1995-05-30
著者
-
Sasaki Kimihiro
Faculty Of Engineering Kanazawa University
-
Sasaki Kimihiro
Faculty Of Engineering
-
Konishi Hideaki
Faculty Of Engineering Kanazawa University
-
Hata Tomonobu
Faculty Of Engineering Kanazawa University
-
Iwai Daisuke
Faculty of Engineering, Kanazawa University
-
Iwai Daisuke
Faculty Of Engineering Kanazawa University
関連論文
- Optical and Thermal Evaluation of Semiconductor by Differential Photothermal Deflection Spectroscopy : Photoacoustic Spectroscopy and Ultrasonic Imaging
- Determination of Material Thermal Properties Using Photoacoustic Signals Detected by a Transparent Transducer
- Analysis of Pyroelectric Signal in Photoacoustic Spectroscopy Using a Transparent Transducer
- Influence of Piezoelectric and Pyroelectric Effects on Signal of PAS Using a Transparent Transducer : Photoacoustic Spectroscopy and Ultrasonic Imaging
- Theoretical Analysis of Photoacoustic Signal on PAS Using a Transparent Transducer : Photoacoustic Effect and Spectroscopy
- Consideration on PA Signals of Multilayer Structure Measured by PAS Using Transparent Transducer : Photoacoustic Spectroscopy
- Reduction of Internal Stress by Compositional Gradient Layer Inserted between TiSi_2 and Si
- Evaluation of Multilayer Structure and Depth Profile by PAS Using a Transparent Transducer : Photoacoustic Spectroscopy
- Evaluation of Ion Implantation into Silicon Photoacoustic Spectroscopy using Transparent Transducer Method : Photoacoustic Spectroscopy
- Collision Detection VLSI Processor for Intelligent Vehicles Using a Hierarchically-Content-Addressable Memory (Special Issue on Integrated Electronics and New System Paradigms)
- All-Optical Switching Phenomenon in Polydiacetylene (12,8) Based Nonlinear Directional Coupler (Special Section on Organic Functional Devices)
- Two-Photon Absorption Measurements in PDA (12,8) Waveguides (Special Section on Organic Functional Devices)
- Refractive Index Change of Vanadyl Phthalocyanine Thin Film in Guided Wave Geometry (Special Section on Organic Functional Devices)
- High Rate Deposition of Thick Piezoelectric ZnO and AlN Films Using a New Magnetron Sputtering Technique : Communication Devices and Materials
- Change in the characteristics of amorphous As_2S_3 induced by injected acoustic domains : Physical Acoustics
- Evaluation of Optical Absorption Coefficient of Si by Photothermal Spectroseopy Using Transparent Pyroelectric Transducer
- Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process(Recent Progress in Oxide Thin Films by Sputtering)
- High Rate and Low Temperature Deposition of Co-Cr Films by Exposed Pole Magnetron Co-Sputtering System
- Optical-Transmission Modulation in CdS Caused by Off-Axis Acoustoelectric Domain
- New Control Method of CdS High Field Demain Velocity Induced by Injected Acoustic Flux
- Mechanisms of Transmitted Optical Modulation Caused by Acoustic Flux in CdS
- Threshold Electric Field for Domain Formation in Semiconductive CdS
- Measurement of Nonlinear Acoustic Gain in CdS
- Study on Differential Photothermal Deflection Spectroscopy (PDS) Considering the Intensity Profile of a Probe Beam