Feasibility of Ultra-Thin Films for Gate Insulator by Limited Reaction Sputtering Process(<Special Section>Recent Progress in Oxide Thin Films by Sputtering)

概要

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A new sputtering technique named "limited reaction sputtering" is proposed and the feasibility toward an ultra-thin gate insulator isinvestigated. 5-10 nm thick ZrO_2 films were prepared on Si(100) substrates and analyzed by XPS, HR-RBS and RHEED. Significant Zr diffusion into the Si substrate and interface oxidation were not observed. An optimum film was obtained at growth temperature of 300℃, oxygen flow rate of 4.2% and 500℃-10 sec RTA. The equivalent oxide thickness of 2 nm wasrealized with leakag e current of 10^<-7> A/cm^2 at 1.5 MV/cm.
社団法人電子情報通信学会の論文
2004-02-01