Fabrication and Characterization of ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu Structures for Ferroelectric-Electroluminescent Devices
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概要
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ZnO:Al (AZO)/Sr0.8Bi2.2Ta2O9 (SBT)/Pt and AZO/SBT/Y2O3:Eu/Pt structures were fabricated, and their crystallinity, ferroelectric, and electroluminescent (EL) properties were investigated for the first time. The AZO/SBT/Pt structures showed a typical hysteresis loop, in which their double remnant polarization was approximately 5.3 μC/cm2. The polycrystalline SBT/Y2O3:Eu structures were grown on a Pt-coated substrate, in which ferroelectric phases were formed on an Y2O3:Eu film with cubic crystals. The electrical and EL properties of the AZO/SBT/Y2O3:Eu/Pt structures were measured, and then EL emission peaks associated with the 5D0–7F1 ($\lambda=601$ nm) and 5D0–7F2 ($\lambda=617$ nm) transitions of Eu3+ were observed. The EL emission pattern of the AZO/SBT/Y2O3:Eu/Pt structure was different from the PL emission pattern of the Y2O3:Eu film. Furthermore, polarization–voltage characteristics with counterclockwise hysteresis loops and an asymmetric behavior of current–voltage characteristics were observed in the fabricated AZO/SBT/Y2O3/Pt:Eu structures.
- 2009-09-25
著者
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Tokunaga Yoshiaki
Kanazawa Inst. Technol. Ishikawa Jpn
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Aizawa Koji
Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Tokunaga Yoshiaki
Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Inagaki Hiroyuki
Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Takatsuka Yushi
Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Hoko Koichi
Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Otani Yusuke
Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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