単結晶電極をもつ強磁性トンネル接合のトンネル磁気抵抗効果

概要

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We studied the TMR effect of magnetic tunnel junctions (MTJs) with a single-crystal electrode. As a result, the crystal orientation dependence of the TMR effect was observed in MTJs with a single-crystal Fe electrode. In the case of MTJs with an ultrathin Fe(001) electrode, the tunnel spectra showed oscillatory behavior as a function of the bias voltage in the positive bias region, and the differential magnetoresistance also showed oscillations. For MTJs with an ultrathin Cu(001) insertion layer, very large oscillation of the MR as a function of the thickness of the cu layer was observed. These oscillations are the first observations of the quantum size effect in TMR. They provide new physical information on spin-dependent tunneling, and encourage the creation of new voltage-controlled spinfunctional devices.
社団法人日本磁気学会の論文
2003-01-01