Cu-Ni/Ru素子におけるペルチェ効果に対するCu-Ni膜厚の影響

概要

論文の詳細を見る
We have studied Peltier coefficients (Π) in Cu-Ni-based submicron-sized junctions with two different Cu-Ni layer thicknesses (tCu-Nis) and buffer materials. The junctions for both buffer materials, Ru and Ta, showed enhanced Π when tCu-Ni was fixed at 100 nm. We obtained Πs of ∼245 and ∼480 mV for Ru and Ta-buffered junctions, respectively. These were more than 10 times larger than that estimated from the bulk Cu-Ni/Ru(or Au) contact (∼ 11 mV). Concerning the tCu-Ni dependence of Π for Ru-buffered junctions, they did not demonstrate any enhanced Π at tCu-Ni = 30 nm, which was only ∼6.5 mV, while they showed large Πs at tCu-Ni = 100 nm as mentioned above. The results suggested that the enhanced Π acquired sufficient volume of each columnar grain in the Cu-Ni layer to induce the inner-grain inhomogeneity.