プレーナマグネトロンスパッタリング生成によるAlN膜の結晶配向性と残留応力のプラズマ汚染の影響(X線材料強度小特性)

概要

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Crystal orientation and residual stress development in AlN films deposited on BLC glass (Borosilicate glass ; the thermal expansion coefficient of which is nearly equal to that of AIN) substrate were investigated by an X-ray diffraction. Deposition was made by a conventional planar magnetron sputtering system under the nitrogen gas pressure of 0.65 Pa at the substrate temperature between 423K and 523K. In order to investigate the effect of plasma contamination, the distance between the target and the substrate holder (target distance d_γ) was chosen at 30 mm and 60 mm. The intensity of 00・2 diffraction showed that the c-axis orientation of AlN films was improved by the deposition with a short target distance (d_γ=30mm). However, in all the AlN films deposited with d_γ=30 mm, fine cracks were observed probably due to the effect of plasma contamination. In the films deposited with a long target distance (d_γ=60 mm), large tensile residual stress greater than 1 GPa was found at every substrate temperature used in the present investigation. In the films deposited with d_γ=30 mm, tensile residual stress became larger with increasing substrate temperature. As compared with the AlN films deposited with d_γ=60 mm, the tensile residual stress in AlN films deposited with d_γ=30 mm considerably decreased because of the effect of ion bombardment.
社団法人日本材料学会の論文
1994-07-15