c軸配向した窒化アルミニウム膜のX線的残留応力解析

概要

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Crystal structure and residual stresses in AIN films deposited on BLC glass substrates by a magnetron sputtering method were measured by X-ray diffraction method. Deposited AIN films had a columnar structure with its <00・1> orientation being perpendicular to the glass substrate. From this structure, the intensity of hk・l diffraction could be measured just only at a particular ψ-angle and, therefore, the so-called sin^2ψ method could not be applied for measuring their residual stresses. A new stress analyzing method was proposed in the present investigation instead of the sin^2ψ method. Compressive residual stresses were found in the AIN films deposited under the condition of fairly high nitrogen gas pressure, while tensile residual stresses were found under the condition of low gas pressure.
社団法人日本材料学会の論文
1993-01-15