ホットプレスしたSi_3N_4セラミックスの研削加工層の残留応力とその熱的安定性

概要

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The X-ray stress measuring method was applied to investigate a residual stress distribution in the ground surface layer of Si_3N_4 ceramics and its thermal stability. Residual stress in a heavily ground layer was measured using the diffraction lines (212), (321), (301) and (210) which appear at 131°, 117°, 81° and 54° in 2θ, respectively, by using CrK_α radiation. Successive layer removing by lapping and subsequent X-ray stress measurements revealed that compressive residual stress existed throughout the deformed layer which was restricted up to the depth of 20 μm even in the case a heavy grinding condition. There existed a diffraction plane dependence of the measured residual stress values. In order to investigate the thermal stability of residual stress, the specimens were annealed for an hour at each temperature ranged from 770 K to 1770 K in an argon atmosphere. Annealing below 1000 K did not change the initial lattice strain state nor the initial diffraction line width. This means that both macro- and micro-residual stresses are stable at such high temperatures.
社団法人日本材料学会の論文
1988-02-15