常圧,ホットプレスおよびHIP成形したSi_3N_4セラミックスのX線応力測定の基礎

概要

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X-ray elastic constants of sintered, hot-pressed and HIP'ed Si_3N_4 ceramics were determined from various diffraction lines by using CrKα radiation. The measured X-ray elastic constants for (212), (411) and (321) diffraction planes were nearly the same each other and did not dependent on the production method. Those for (301) and (210) planes, which were measured in a low diffraction region only for hot-pressed Si_3N_4, were different from those for the above three planes. Residual stress measurements were tried on the ground surface of hot-pressed Si_3N_4. Mild grinding by a diamond grinding wheel did not produce large residual stress. However, heavy grinding by a SD140 grinding wheel did not produce large residual stress state. A non-liner d_ψ-sin^2ψ relation was observed in the measurement of (212) plane but no systematic deviation from a straight line could be shown in the both cases of (301) and (210) planes. The lack of ψ-splitting behavior means that the deformation was performed homogeneously in microscopic scale during grinding.
社団法人日本材料学会の論文
1988-02-15