SrTiO_3-Bi_2O_3系コンデンサの粒界の伝導特性

概要

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Donor density (N_d=9.5×10^<24>/m^3) and energy depth of interfacial state (ΔE_i=0.86 eV) at vicinities of SrTiO_3 ceramics grain boundaries were estimated using Hall coefficient and ICTS, respectively. The voltage of SrTiO_3 ceramic grain boundary was analysed by C-V characteristics, N_d and ΔE_i on the basis of the structure and composition of the grain boundaries, which were investigated by TEM, μAES and SIMS. The electrical conduction mechanism of SrTiO_3 ceramics grain boundary was proposed.
社団法人日本セラミックス協会の論文
1992-06-01