PL測定による酸化亜鉛ヘテロ構造薄膜評価(<特集>セラミックスインテグレーション)

概要

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ZnO thin films were grown on TbAlO_3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO_3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO_3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31 ×10^5 cm^<-1>
社団法人日本セラミックス協会の論文
2002-05-01