Kondo-like Effect of Atomic Motion on Resistivity in Pb_<1-x>Ge_xTe

概要

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Kondo-like effect on the low temperature resistivity associated with off-center GeTons in Pb. .Ge.Te is theoretically explored. The tunneling nuotion of Ge ions between two equivalent sites along the [1 l l] direction is introduced by means of the so-called two-level description. The observed nearly logarithmic temperaturedependence of resistivity in Pb. .Ge.Te is ascribed 1.o the strong coupling limit of thescaling of the interaction between carriers and the two-level system. In the presence ofthe structural phase change, the asymmetry of the double-well potential of Ge ions isinduced. The freezing of scaling process at the energy comparable to splitting betweentwo-levels leads to a drastic decrease of the logarithmic porticcn of resistivity belowthe critical temperature of the structural phase change.
社団法人日本物理学会の論文
1987-02-15