Magnetoresistance of n-InSb in Weakly Localized Regime
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概要
- 論文の詳細を見る
The temperature and the magnetic field dependences of resistivity of metallico-InSb with carrier concentration, n, 1 x 10" cm '<n<9 x 10" cm ', have beenanalysed by taking into account both effects of Iocalization and interaction. Thepresent theory explains characteristic features of the resistivity in such metallicsamples.
- 社団法人日本物理学会の論文
- 1982-10-15
著者
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Fukuyama Hidetoshi
Institute For Solid State Physics University Of Tokyo
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Fukuyama Hidetoshi
Institute For Solid State Physics The University Of Tokyo
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Hoshino Kozo
Faculty Of Integrated Arts And Sciences Hiroshima University
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Hoshino Kozo
Faculty Of Engineering Niigata University
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ISAWA Yoshimasa
Research Institute of Electrical Communication,Tohoku University
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Isawa Yoshimasa
Research Institute Of Electrical Communication Tohoku University
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Isawa Yoshimasa
Research Institute Of Electorical Communication Tohoku University
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Fukuyama Hidetoshi
Institute for Solid State Physics,The University of Tokyo
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FUKUYAMA Hidetoshi
Institute for Materials Research, Tohoku University
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