Anomalous Magnetoresistance by Dephasing in a Disordered Layer with Ferromagnetic Boundary : Condensed Matter: Electronic Properties, etc.
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概要
- 論文の詳細を見る
The dephasing effect of the electron by boundary magnetic field is investigated theoretically in a multilayer structure of a nonmagnetic conduction layer sandwiched by ferromagnetic layers. The induced moment at the interface is shown to cause dephasing if a spin mixing mechanism such as spin-orbit interaction is present. This effect suppresses the anti-localization due to the spin-orbit interaction and is stronger when the magnetization of the two layers are parallel to each other, contributing to an anomalous positive magnetoresistance close to a switching field at low temperatures.
- 社団法人日本物理学会の論文
- 2000-08-15
著者
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Fukuyama Hidetoshi
Institute For Solid State Physics The University Of Tokyo
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TATARA Gen
Institute of Physics, College of Arts and Sciences University of Tokyo
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Tatara Gen
Graduate School Of Science And Engineering Tokyo Metropolitan University:presto Japan Science And Te
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Fukuyama Hidetoshi
Institute Of Solid State Physics University Of Tokyo
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FUKUYAMA Hidetoshi
Institute for Materials Research, Tohoku University
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