単結晶SiC薄膜の製作と微小構造材料への適用

概要

論文の詳細を見る
This paper deals with a proposal for both the fabrication process of single-crystal silicon-carbide (SiC) thin-films and its application to microstructure. The SiC thin film was synthesized using molecular beam epitaxy, where single crystal SiC layer can be grown on single crystal silicon (Si) substrate. Applying lithography and etching process, microscopic cantilevers were fabricated. Reactive ion etching (RIE) process shaped the outline of the cantilevers. Then, the Si substrate beneath the cantilevers was selectively removed with some types of etching processes to compare the geometrical accuracy. Typical dimensions of the cantilevers were 10μm in length and 30μm in width. The thickness was 180nm that is equal to thickness of the SiC epitaxial layer. The bending test of the cantilevers were also carried out to demonstrate its flexibility.
社団法人精密工学会の論文
2005-09-05