High-Sensitivity Mid-Ultraviolet Pt/Mg0.59Zn0.41O Schottky Photodiode on a ZnO Single Crystal Substrate
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概要
- 論文の詳細を見る
A Pt/Mg0.59Zn0.41O Schottky photodiode on a ZnO single crystal is reported. The Mg0.59Zn0.41O film was deposited on a ZnO single crystal substrate by an RF magnetron sputtering method. The optical bandgap of the Mg0.59Zn0.41O film obtained from the spectral transmittance and reflectance, was 4.6 eV. The fabricated photodiode consisted of an anti-reflection SiO2 film, semitransparent Schottky Pt electrode, Mg0.59Zn0.41O film, n+-ZnO single crystal substrate and Pt/Ti ohmic electrode. The ideality factor of the photodiode, obtained from the current--voltage characteristics, was 1.3. The maximum responsivity was 0.015 A/W at the wavelength of 220 nm.
- Japan Society of Applied Physicsの論文
- 2008-05-25
著者
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Kashiwaba Yasube
Department Of Electronic Engineering Sendai National College Of Technology
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Hane Kazuhiro
Department Of Electronic Mechanical Engineering Faculty Of Engineering Nagoya University
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Endo Haruyuki
Electronics And Mechanics Division Iwate Industrial Research Institute
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Kikuchi Michiko
Electronics And Mechanics Division Iwate Industrial Research Institute
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Ashioi Masahumi
Electronics and Mechanics Division, Iwate Industrial Research Institute, Morioka 020-0852, Japan
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Kashiwaba Yasuhiro
Department of Electronic Engineering, Sendai National College of Technology, Sendai 989-3128, Japan
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Kashiwaba Yasube
Center for Regional Collaboration in Research and Education, Iwate University, Morioka 020-8551, Jap
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Ashioi Masahumi
Electronics And Mechanics Division Iwate Industrial Research Institute
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