Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask
スポンサーリンク
概要
- 論文の詳細を見る
A possible candidate for carbon contaminant removal in Ru-capped extreme ultraviolet lithography (EUVL) mask is ozone dissolved water (DIO3). However, the use of DIO3 leaves reflectivity loss and serious surface damages on Ru capping layer caused by its high oxidation potential. In this study, an optimum DIO3 cleaning condition for effective carbon cleaning without surface damage was investigated both theoretically and experimentally. The effect of feed gases such as O2, CO2, and N2 of various concentrations were tried during DIO3 generation for oxidation stability on Ru capping layer and N2 added 15 ppm DIO3 was found to be the best condition. However carbon contaminant was ineffectively removed at this condition. Thus megasonic is irradiated during DIO3 process and the results show that carbon is not only completely removed in a shorter time but also lower reflectivity loss was accomplished with minimal increase in the surface roughness.
- 2012-09-25
著者
-
Kim Min-su
Department Of Large Animal Clinical Sciences College Of Veterinary Medicine University Of Florida
-
Ahn Jin-ho
Department Of Electronic Engineering Hoseo University
-
Lee Seung-ho
Department Of Companion And Laboratory Animal Science Kongju National University
-
Cho Han-ku
Division of Memory, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
-
Ahn Jin-ho
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
-
Lee Han-shin
Division of Memory, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
-
Kim Min-su
Department of Materials Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea
-
Kang Bong-kyun
Department of Materials Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea
-
Lee Seung-ho
Department of Materials Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea
-
Park Jin-Goo
Department of Bio-Nano Technology and Micro Biochip Center, Hanyang University, Ansan 426-791, Korea
-
Park Jin-Goo
Department of Materials Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Korea
関連論文
- A high performance network-on-chip scheme using lossless data compression
- 重度出血性ショック犬におけるバソプレッシンの血液動力学的特性(内科学)
- イソフルレン麻酔下の犬における眼内圧と血行力学的パラメータに及ぼす電気鍼療法の効果(外科学)
- The Penile Erection Efficacy of a New Phosphodiesterase Type 5 Inhibitor, Mirodenafil (SK3530), in Rabbits with Acute Spinal Cord Injury(Pharmacology)
- MTR-Fill : A Simulated Annealing-Based X-Filling Technique to Reduce Test Power Dissipation for Scan-Based Designs
- イソフルラン麻酔下の不可逆性出血性ショック犬における膠質蘇生前のバソプレッシンを用いた昇圧療法(内科学)
- Effect of a Guard-Ring on the Leakage Current in a Si-PIN X-Ray Detector for a Single Photon Counting Sensor
- Effect of a guard-ring on the leakage current in a Si-PIN x-ray detector for a single photon counting sensor (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Effect of a guard-ring on the leakage current in a Si-PIN x-ray detector for a single photon counting sensor (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 犬の針刺激における鎮静効果を評価するための脳波検査(EEG)におけるスペクトルエッジ周波数(短報)(外科学)
- Point of Use Regeneration of Oxide Chemical Mechanical Planarization Slurry by Filtrations
- Effect of Chemicals and Slurry Particles on Chemical Mechamical Polishing of Polyimide
- Particle Removal and Its Mechanism on Hydrophobic Silicon Wafer in Highly Diluted NH_4OH Solutions with an Added Surfactant : Semiconductors
- Effect of Organic Acids in Copper Chemical Mechanical Planarization Slurry on Slurry Stability and Particle Contamination on Copper Surfaces
- Passivation and Etching of Wafer Surfaces in HF-H_2O_2-WA Solutions
- The Hydrophilization of Process Wafers in Dilute Hydrogen Peroxide Solutions and Ozonated Deionized Water and Its Effects on Defects and Gate Oxide Integrity
- Enhanced fluorescence by controlled surface roughness of plastic biochip (Special issue: Microprocesses and nanotechnology)
- IS-15 Bone Mineral Density in Patients with Endometrial Cancer(Group2 Oncology2,International Session)
- Damage Free Particle Removal from Extreme Ultraviolet Lithography Mask Layers by High Energy Laser Shock Wave Cleaning
- Effect of Alkaline pH on Polishing and Etching of Single and Polycrystalline Silicon
- Reaction of Ozone and H2O2 in NH4OH Solutions and Their Reaction with Silicon Wafers
- The Effect of Hydrogen Peroxide on Frictional and Thermal Behaviors in a Citric Acid-Based Copper Chemical Mechanical Planarization Slurry
- Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask
- Fabrication of Large-Area CoNi Mold for Nanoimprint Lithography
- Ovarian malignant melanoma without evidence of teratoma
- Fabrication of Stainless Steel Mold Using Electrochemical Fabrication Method for Microfluidic Biochip
- Physical and Chemical Characterization of Reused Oxide Chemical Mechanical Planarization Slurry
- Hybrid Cleaning Technology for Enhanced Post-Cu/Low-Dielectric Constant Chemical Mechanical Planarization Cleaning Performance
- Effect of Corrosion Inhibitor, Benzotriazole, in Cu Slurry on Cu Polishing
- The Hydrophilization of Process Wafers in Dilute Hydrogen Peroxide Solutions and Ozonated Deionized Water and Its Effects on Defects and Gate Oxide Integrity
- Hybrid Cleaning Technology for Enhanced Post-Cu/Low-Dielectric Constant Chemical Mechanical Planarization Cleaning Performance (Special Issue : Advanced Metallization for ULSI Applications)